Open Box Sale -- Samsung 850 EVO 250GB SSD M.2 MZ-N5E250BW

SKU: MZ-N5E250BW

RRP $219.00
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Samsung 850 EVO M.2 2280 250GB Solid State Drive MZ-N5E250BW: Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

Features

  • PRODUCT TYPE

    M.2

  • INTERFACE

    SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

  • CAPACITY

    250 GB (1GB=1 Billionbyte by IDEMA) * 
    *Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

  • SEQUENTIAL READ SPEED

    Up to 540 MB/sec Sequential Read * 
    *Performance may vary based on system hardware & configuration

  • SEQUENTIAL WRITE SPEED

    Up to 500 MB/sec Sequential Write * 
    *Performance may vary based on system hardware & configuration

  • MEMORY SPEED

    Samsung 32 layer 3D V-NAND
    Samsung 512 MB Low Power DDR3 SDRAM

FULL SPECIFICATIONS

Type

  • PRODUCT TYPE

    M.2

  • INTERFACE

    SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

Application 

 
  • CONSUMER

    Yes

Storage

  • CAPACITY

    250 GB (1GB=1 Billionbyte by IDEMA) * 
    *Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Features

  • SEQUENTIAL READ SPEED

    Up to 540 MB/sec Sequential Read *
    *Performance may vary based on system hardware & configuration

  • SEQUENTIAL WRITE SPEED

    Up to 500 MB/sec Sequential Write *
    *Performance may vary based on system hardware & configuration

  • RANDOM READ SPEED

    Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
    * Performance may vary based on system hardware & configuration
    Random Read (4KB, QD1): Up to 10,000 IOPS Random Read 
    * Performance may vary based on system hardware & configuration

  • RANDOM WRITE SPEED

    Random Write (4KB, QD32): Up to 89,000 IOPS Random Write * 
    *Performance may vary based on system hardware & configuration
    Random Write (4KB, QD1): Up to 40,000 IOPS Random Write 
    * Performance may vary based on system hardware & configuration

  • MEMORY SPEED

    Samsung 32 layer 3D V-NAND
    Samsung 512 MB Low Power DDR3 SDRAM

  • CONTROLLER

    Samsung MGX Controller

  • TRIM SUPPORT

    Yes

  • AES ENCRYPTION

    AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)

  • S.M.A.R.T. SUPPORT

    Yes

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • WWN SUPPORT

    World Wide Name supported

  • DEVICE SLEEP MODE SUPPORT

    Yes

General

  • POWER CONSUMPTION (W)

    50 mWatts 
    * Actual power consumption may vary depending on system hardware & configuration
    Average: 2.4 Watts *Maximum: 3.7 Watts (Burst mode) 
    * Actual power consumption may vary depending on system hardware & configuration

  • VOLTAGE

    5V ± 5% Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability (MTBF)

Environmental Specs

  • OPERATING TEMPERATURE

    32ºF - 158ºF

  • SHOCK

    1,500G & 0.5ms (Half sine)

Form Factor

  • PRODUCT

    M.2

Dimensions (W x H x D)

  • PRODUCT

    3.16" x 0.87" x 0.06"

Weight

  • PRODUCT

    0.27 lb.

Software

  • MANAGEMENT SW

    Magician Software

Warranty

  • PRODUCT

    5 Years Limited Warranty or 75TBW Limited Warranty

SKU OB-MZ-N5E250BW
Model # MZ-N5E250BW
Brand Samsung
Shipping Weight 0.1310kg
Shipping Width 0.080m
Shipping Height 0.020m
Shipping Length 0.020m
Shipping Cubic 0.000032000m3
Unit Of Measure ea
Type store

5 Year Manufacture Warranty

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