Open Box Sale -- Samsung 850 EVO 250GB SSD M.2 MZ-N5E250BW
SKU: MZ-N5E250BW
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Samsung 850 EVO M.2 2280 250GB Solid State Drive MZ-N5E250BW: Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Features
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PRODUCT TYPE
M.2
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INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
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CAPACITY
250 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise) -
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration -
SEQUENTIAL WRITE SPEED
Up to 500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration -
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 512 MB Low Power DDR3 SDRAM
FULL SPECIFICATIONS
Type
-
PRODUCT TYPE
M.2
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INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Application
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CONSUMER
Yes
Storage
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CAPACITY
250 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Features
-
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration -
SEQUENTIAL WRITE SPEED
Up to 500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration -
RANDOM READ SPEED
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration -
RANDOM WRITE SPEED
Random Write (4KB, QD32): Up to 89,000 IOPS Random Write *
*Performance may vary based on system hardware & configuration
Random Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration -
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 512 MB Low Power DDR3 SDRAM -
CONTROLLER
Samsung MGX Controller
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TRIM SUPPORT
Yes
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AES ENCRYPTION
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
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S.M.A.R.T. SUPPORT
Yes
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GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
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WWN SUPPORT
World Wide Name supported
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DEVICE SLEEP MODE SUPPORT
Yes
General
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POWER CONSUMPTION (W)
50 mWatts
* Actual power consumption may vary depending on system hardware & configuration
Average: 2.4 Watts *Maximum: 3.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration -
VOLTAGE
5V ± 5% Allowable voltage
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RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
Environmental Specs
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OPERATING TEMPERATURE
32ºF - 158ºF
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SHOCK
1,500G & 0.5ms (Half sine)
Form Factor
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PRODUCT
M.2
Dimensions (W x H x D)
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PRODUCT
3.16" x 0.87" x 0.06"
Weight
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PRODUCT
0.27 lb.
Software
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MANAGEMENT SW
Magician Software
Warranty
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PRODUCT
5 Years Limited Warranty or 75TBW Limited Warranty
SKU | OB-MZ-N5E250BW |
Model # | MZ-N5E250BW |
Brand | Samsung |
Shipping Weight | 0.1310kg |
Shipping Width | 0.080m |
Shipping Height | 0.020m |
Shipping Length | 0.020m |
Shipping Cubic | 0.000032000m3 |
Unit Of Measure | ea |
Type | store |
5 Year Manufacture Warranty
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